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1 +0 3w low emi class-d audio power amplifier with auto - recovering short-circuit protection general d esc ription the HM2010 is a high efficiency , low emi, filterless class- d audio amplifier with auto-recovering short-circuit protection . it operates from 2.7v to 5.5v supply. when powered with 5v voltage, t he HM2010 can deliver up to 3 w in to a 4 load or 1.8w into an 8 load at 10% thd+n. as a class-d audio amplifier, the HM2010 features 90 % high efficiency and 75db psrr at 217hz which make the device ideal for battery-powered high quality audio applications. one of the key benefits of the HM2010 over traditional class-d audio amplifiers is it generates much lower emi emissions, thus greatly simplifying the system design for use in portable applications. also included is the over -current or short-circuit protection with auto-recovery, which ensu res the device be operated safely and reliably without the need for system interruption. the HM2010 is available in 1.5mmx1.5mm col- 9l , msop- 8l , and dfn2x2- 8l package. applications ? mobile phones ? portable digital assistant (pda) ? mp3/mp4 player features ? filterless class-d operation ? high efficiency up to 90% ? output power at 5v supply - 3.0w (4 load, 10% thd+n) - 1. 8w (8 load, 10% thd+n) - 2.4w (4 load, 1% thd+n) - 1.4w (8 load, 1% thd+n) ? low thd+n: 0. 05 % (typical) @ 1khz (vdd=3.6v, rl=8 , p o =0.5 w) ? low quiescent current: 2ma at 3.6v (8 load) ? extremely low shutdown current: 0.1a (typical) ? high psrr: 75db (typical) at 217hz ? no bypass capacitor required for the common-mode bias ? under-voltage lockout ? auto recovering short-circuit protection ? over-current & thermal overload protection ? low emi design ? available in 1. 5mmx1.5mm col-9l, msop- 8l , and dfn2x2- 8l packages application circuit figure 1 : typical audio amplifier application circuit in- vo- differential input 1uf vdd/pvdd shdn to battery ci in- vo- on gnd/pgnd ri ri off to battery vo+ single-ended input in- vo+ cs ci in+ ri off in- in+ ri gnd/pgnd cs vdd/pvdd in+ 1uf shdn on ci ci
2 pin configuration and description pin number symbol description +0 a +0 d +0 m a1 3 3 in + positive differential input a2 7 7 gnd signal g round a3 8 8 vo - negative btl output b1 6 6 vdd power supply b2 pvdd power supply for the output stage . it is internally shorted to vdd pin for msop - 8l and dfn - 8l packages. b3 pgnd power ground for the output stage . it is internally shorted to gnd pin for msop - 8l and dfn - 8l packages. c1 4 4 in - negative differential input c2 1 1 shdn active low shutdown control c3 5 5 vo + positive btl output funct ional block diagram figure 2: function block diagram ordering information p art number temp erature range package HM2010a - 40c to +85c col 1.5 x 1.5 - 9l HM2010d - 40c to +85c dfn2 x 2 - 8l HM2010 m - 40c to +85c msop - 8l +0 a ( top view ) +0d ( top view ) +0m ( top view ) +0 output driver 150k pvdd logic vdd shdn shutdown control osc protection pwm modulator ocp pgnd output driver in- in+ vo- 150k note: total gain=2x150k/ri vo+ startup bias vdd 300k gnd
3 absolute maximum ratings parameter unit supply v oltage - 0.3v to 6 .5 v storage temperature - 4 5c to 150 c input voltage - 0.3v to vdd +0.3v power dissipation internally limited esd rating (hbm) 4 000v junction temperature 150c soldering information vapor phase (60 sec.) 215 c infr ared (15 sec.) 220 c note: stresses beyond those listed under absolute maximun ratings may cause permanent damage to the device. these are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. package dissipation ratings package ja unit col 1.5x1.5 - 9l 90 ~ 220 c/w msop - 8l 180 c/w dfn2 x 2 - 8l 1 48 c/w recommended operating conditions parameter min typ max unit operating voltage , v dd 2.7 5.5 v operating t emperature, t a - 40 + 8 5 c load i mpedance, z l 3.2 +0
4 electrical characteristics note: the following electrical characteristics state dc and ac electrical specifications under particular test conditions which guarantee specific performance limits. but note that specifications are not guaranteed for parameters where no limit is given. the typical value however, is a good indication of device performance. all voltages in the following tables are specified at 25c which is generally taken as parametric norm. t a =25c, v dd = 3.6v , r l=8 , gain = 2v/v , r i =150k , c i =0.1f , unless otherwise noted. symbo l parameter conditions min typ max unit v dd supply voltage 2.7 5.5 v v uvlu power up threshold voltage vdd from low to high 2.2 v v uvld power down threshold voltage vdd from high to low 2.0 v i dd quiescent current vdd=5v, v in =0v, no load 2.2 5 ma vdd=3.6v, v in =0v, no load 2.0 4 ma i sd shutdown current shdn =0v 0.1 a v sdih shdn input high 1. 3 v v sdil shdn input low 0.4 v p o output power, load=8 , vdd=5v thd+n=1 0 %; f=1 khz 1. 8 w thd+n=1 %; f=1 khz 1. 4 p o output power, load=4 , vdd=5v thd+n=1 0 %; f=1 khz 3.0 w thd+n=1 %; f=1 khz 2.4 a v gain 300 k / ri v/v r o output resistance in shutdown mode shdn = 0v 2 k r s h dn s hdn input resistance 300 k v ref vref voltage vdd/2 v thd+n total harmonic distortion + noise , load= 8 vdd=3.6v, p o =0.5w, f=1 k hz 0.05 % vdd=5v, p o =1w, f=1 khz 0.08 thd+n total harmonic distortion + noise , load=4 vdd=3.6v, p o =1w, f=1 khz 0.06 vdd=5v, p o =2w, f=1 khz 0 .09 v n output v oltage n oise f noise =20hz ~ 20 khz with inputs ac - g rounded 45 v rms v os output offset voltage inputs ac - g rounded 10 mv efficiency vdd=5v p o =1w , rl=8 +33h f=1 khz 90 % psrr power supply rejection ratio f=217hz 75 db cmrr common m ode r ejection r atio f=1 khz 70 db t stup start up time 35 ms f pwm pwm switching frequency 8 00 khz f jitter pwm frequency jittering range 2 4 khz i limit over - c urrent p rotection t hreshold vdd=3.6v 1.6 a t otp over - temperature threshold 160 ? c t hys over - temperature hysteresis 3 0 ? c HM2010
5 test setup for performance testing figure 3: test block diagram notes: 1) a 33-h inductor was placed in series with the load resistor to emulate a small speaker for efficiency measurements; 2) the 30-k hz l ow -pass filter is required even if the analyzer has an internal low-pass filter. an rc low pass filter (100 , 47nf) issued on each output for the data sheet graphs. +0
6 typical performance characteristics t a =25c, vdd = 3.6v, gain = 2v/v , r i =150k , c i =0.1f , unless otherwise noted. figure 4: efficiency vs. output power figure 5: efficiency vs. output power figure 6: efficiency vs. output power figure 7: efficiency vs. output power figure 8: output power vs. supply voltage figure 9: output power vs. supply voltage +0 efficiency vs output power 40.0% 50.0% 60.0% 70.0% 80.0% 90.0% 100.0% 0 500 1000 1500 2000 output power(mw) efficiency(%) vdd=5v, rl=8 ? +33uh efficiency vs output power 40.0% 50.0% 60.0% 70.0% 80.0% 90.0% 100.0% 0 200 400 600 800 1000 output power(mw) efficiency(%) vdd=3.6v, rl=8 ? +33uh efficiency vs output power 40.0% 45.0% 50.0% 55.0% 60.0% 65.0% 70.0% 75.0% 80.0% 85.0% 90.0% 0 200 400 600 800 1000 1200 1400 1600 1800 output power(mw) efficiency(%) vdd=5.0v,rl=4 ? +33uh efficiency vs output power 40.0% 45.0% 50.0% 55.0% 60.0% 65.0% 70.0% 75.0% 80.0% 85.0% 90.0% 0 200 400 600 800 1000 1200 1400 1600 1800 output power(mw) efficiency(%) vdd=3.6v,rl=4 ? +33uh output power vs supply voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 2.5 3 3.5 4 4.5 5 5.5 supply voltage (v) output power (w) rl=4 ?+33uh, thd+n=1% rl=4 ?+33uh, thd+n=10% output power vs supply voltage 0 0.5 1 1.5 2 2.5 2.5 3 3.5 4 4.5 5 5.5 supply voltage (v) output power (w) rl=8 ?+33uh, thd+n=1% rl=8 ?+33uh, thd+n=10%
7 typical performance characteristics (cont.) t a =25c, vdd = 3.6v , gain = 2v/v , r i =150k , c i =0.1f , unless otherwise noted. figure 10: thd+n vs. frequency figure 11: thd+n vs. frequency figure 12: thd+n vs. output power figure 13: thd+n vs. output power figure 14: thd+n vs. output power figure 15: thd+n vs. output power +0 thd+n vs frequency 0.01 0.10 1.00 10.00 10 100 1000 10000 100000 frequency (hz) thd+n(%) vdd=5v,1w rl=4 ?+33uh vdd=5v,1w rl=8 ?+33uh thd+n vs frequency 0.01 0.10 1.00 10.00 10 100 1000 10000 100000 frequency (hz) thd+n(%) vdd=3.6v,0.5w rl=4 ? +33uh vdd=3.6v,0.5w rl=8 ? +33uh thd+n vs output power 0.01 0.1 1 10 100 10 100 1000 10000 output power(mw) thd+n(%) vdd=3.6v, rl=8 ? +33uh thd+n vs output power 0.01 0.1 1 10 100 10 100 1000 10000 output power(mw) thd+n(%) vdd=3.6v,rl=4 ? +33uh thd+n vs output power 0.01 0.1 1 10 100 10 100 1000 10000 output power(mw) thd+n(%) vdd=5v, rl=8 ? +33uh thd+n vs output power 0.01 0.1 1 10 100 10 100 1000 10000 output power(mw) thd+n(%) vdd=5.0v,rl=4 ? +33uh
8 typical performance characteristics (cont.) t a =25c, vdd = 3.6v, gain = 2v/v , r i =150k , c i =0.1f, unless otherwise noted. figure 16: output power vs. input voltage figure 17: quiescent current vs. supply volta ge figure 18: psrr vs. frequency figure 19: short-circuit auto recovering figure 20: output spectrum (broad band) figure 21: output spectrum (audio band) +0 output power vs input voltage 10 100 1000 10000 100 1000 10000 input voltage (mvrms) output power(mw) vdd=5v, rl=8 ? +33uh vdd=5v, rl=4 ? +33uh quiescent current vs supply voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 supply voltag (v) quiescent current(ma) no load psrr vs. frequency -80 -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 frequency(hz) psrr(db) vdd =40.2v, rl=8 ?+33uh, input ac-ground
9 application information the HM2010 is a high efficiency, low emi, filterless cl ass- d audio power amplifier with auto-recovering short-circuit protection. the HM2010 can operate from 2.7 to 5.5v supply. when powered with 5v voltage, the HM2010 can deliver up to 3 w in to a 4 load or 1.8w in to an 8 load at 10% thd+n. as a c lass-d audio amplifier, the HM2010 fe atures 90 % high efficiency and 75db psrr at 217hz which make the device ideal for battery-supplied, high quality audio applications. one of the key benefits of the HM2010 over conventional class-d audio amplifiers is it generates much lower emi emissions, thus greatly simplifying the system design for use in portable device applications, thanks to a proprietary output stage . also included are the short-circuit protection with auto-recovery and the circuitry to minimize turn-on and turn-off transients or click and pops. furthermore, it includes under-voltage lockout to ensure proper operation when the device is first powered up; and over-temperature shutdown to safeguard the die temperature in operation . full differential amplifier the HM2010 is configured in a fully differential topology. the fully differential topology ensures that the amplifier outputs a differential voltage on the output that is equal to the differential input times the gain. the common-mode feedback ensures that the common-mode voltage at the output is biased around vdd/2 regardless of the common-mode voltage at the input. although the fully differential topology of the HM2010 can still be used with a single-ended input, it is highly recommended that the HM2010 be used with differential inputs in a noisy environment, like a wireless handset, to ensure maximum noise rejection. filterless design traditional class-d amplifiers require an output filter. the filter adds cost, size, and decreases efficiency and thd+n performance. the HM2010 s filterless modulation scheme does not require an output filter. because the switching frequency of the HM2010 is well beyond the bandwidth of most speakers, voice coil movement due to the switching frequency is very small. use a speaker with a series inductance larger than 10 h. typical 8 speakers exhibit series inductances in the 20h to 100h range. however, lc filter is required when the trace between the HM2010 and the speaker exceeds 10 0mm . long trace acts like tiny antenna and causes emi emissions which may result in fcc and ce certification failure. low e mi design traditional class-d amplifiers require the use of external lc filters, or shielding, to reduce electromagnetic-interference (emi). the HM2010 employs a proprietary output stage and frequency jittering technique to minimize emi emissions while maintaining high efficiency. how to reduce emi most applications require a ferrite bead filter for emi elimination. the ferrite filter reduces emi around 1mhz and higher. when selecting a ferrite bead, choose one with high-impedance at high frequencies, but low impedance at low frequencies. +0
figure 22 : ferrite bead filter to reduce emi shutdown operation in order to reduce power consumption whil e the device is not in use, the HM2010 includes shutdown circuitry to de -bias all the internal circuitry when the shdn pin is pulled low. during shutdown, the supply current of the HM2010 is reduced less than 0.1a, typically. un der voltage lockout (uvlo) the HM2010 incorporates circuitry designed to detect a low supply voltage. when the supply voltage drops below 2. 0v (typical), the HM2010 goes into shutdown mode. the device will emerge out of the shutdown mode and resume its normal operation only when th e supply voltage is restored to above 2.2v (typical) and the s hdn pin pulled high. short- circuit auto-recovery when an over-current or short-circuit event occurs, the HM2010 goes in to shutdown mode. during shutdown, the HM2010 activates auto-recovery process whose aim is to return the device to normal operation once the fault condition is removed. this process repeatedly examines whether the fault condition persists, and returns the device to normal operation immediately after the fault condition is removed. this feature helps protect the device from large currents and maintain long-term reliability while removing the need for external system interaction to resume normal operation. over temperature protection thermal protection on the HM2010 prevents the device from being damaged when the internal die temper ature exceeds 160c. once the die temperature exceeds the prescribed value, the device will enter into shutdown state and the outputs are disabled. this is not a latched fault. the thermal fault cleared once the temperature of the die decreased by 3 0 c. this large hysteresis will prevent it from generating motor boating sound and allow the device resume normal operation without the need for external system interaction. pop and click circuitry the HM2010 contains circuitry to minimize turn-on and turn-off transients or click and pops, where turn- on refers to either power supply turn-on or device recover from shutdown mode. when the device is turned on, the amplifiers are internally muted. an internal current source ramps up the internal reference voltage. the device will remain in mute mode until the reference voltage reach half supply voltage, 1/2 vdd. as soon as the reference voltage is stable, the device will begin full operation. for the best power-off pop performance, the amplifier should be set in shutdown mode prior to removing the power supply voltage. +0
11 components selection input resistors (r i ) the input resistors (r i ) set the gain of the amplifier according to equation (1). resistor matching is very important in full differential amplifiers. the balance of the output on the reference voltage depends on matched ratios of the resistors. cmrr, psrr, and cancellation of the even-order harmonic distortion diminish if resistor mismatch occurs. therefore, it is recommended to use 1% tolerance resistors or better to keep the performance optimized. matching is more important than overall tolerance. resistor arrays with 1% matching can be used with a tolerance greater than 1%. place the input resistors very close to the HM2010 to limit noise injection on the high-impedance nodes. for optim al performance the gain should be set to 2 times of r i (r i = 150k ) or so. lower gain allows the HM2010 to operat e at its best, and keeps a high voltage at the input making the inputs less susceptible to noise. in addition to these features, higher value of r i minimizes pop noise. deco up ling capacitor (c s ) decoupling capacitor helps to stabilize voltage of power supply and thus reduce the total harmonic distortion (thd). it can also be applied to prevent oscillation over long leads. a low equivalent-series-resistance (esr) capacitor of 1f is required for decoupling and should be placed close to the HM2010 to reduce the resistance and inductance on the trace between the amplifier and the capacitor. for filtering lower-frequency noise signals, a 10f capacitor could be placed near the audio power amplifier. input capacitors (c i ) the input capacitor and input resistor determine the corner frequency of the high pass filter. the corner frequency (fc) is calculated with the equation (2) below. the corner frequency directly influences the low frequency signals and consequently determines output bass quality. pcb layout as output power increases, interconnect resistance (pcb traces and wires) among the audio amplifier, load and power supply create a voltage drop. the voltage loss on the traces between the HM2010 and the load results is lower output power and decreased efficiency. higher trace resistance between the supply and the HM2010 has the same effect as a poorly regulated supply, increase ripple on the supply line also reducing the peak output power. the effects of residual trace resistance increases as output current increases due to higher output power, decreased load impedance or both. to maintain the highest output voltage swing and corresponding peak output power, the pcb traces that connect the output pins to the load and the supply pins to the power supply should be as wide as possible to minimize trace resistance. the use of power and ground planes will give the best thd+n performance. while reducing trace resistance, the use of power planes also creates parasite capacitors that help to filter the power supply line. (1) (2) +0
12 the inductive nature of the transducer load can also result in overshoot on one or both edges, clamped by the parasitic diodes to ground and vdd in each case. from an emi standpoint, this is an aggressive waveform that can radiate or conduct to other components in the system and cause interference. it is essential to keep the power and output traces short and well shielded if possible. use of ground planes, beads, and micro-strip layout techniques are all useful in preventing unwanted interference. as the distance from the HM2010 and the speaker increase, the amount of emi radiation will increase since the output wires or traces acting as antenna become more efficient with length. what is acceptable emi is highly application specific. ferrite chip inductors placed close to the HM2010 may be needed to reduce emi radiation. the value of the ferrite chip is very application specific. +0
13 physical dimensions unit: millimeters. +0
14 unit: millimeters. +0
15 unit: millimeters. +0
16 important notice 1. disclaimer: the information in document is intended to help you evaluate this product. h&m semi. m akes no warranty, either expressed or implied, as to the product information herein listed, and reserves the right to change or discontinue work on this product without notice. 2. life support policy: h&m semis products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of h&m semi inc. as used herein life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 3. h&m semi assumes no liability for incidental, consequential or special damages or injury that may result from misapplications or improper use or operation of its products 4. h&m semi makes no warranty or representation that its products are subject to intellectual property license from h&m semi or any third party, and h&m semi makes no warranty or representation of non-infringement with respect to its products. h&m semi specifically excludes any liability to the customer or any third party arising from or related to the products infringement of any third partys intellectual property rights, including patents, copyright, trademark or trade secret rights of any third party. 5. the information in this document is merely to indicate the characteristics and performance of h&m semi products. h&m semi a ssum es no responsibility for any intellectual property claims or other problems that may result from applications based on the document presented herein. h&m semi makes no warranty with respect to its products, express or implied, including, but not limited to the warranties of merchantability, fitness for a particular use and title. 6. trademarks: the company and product names in this document may be the trademarks or registered trademarks of their respective manufacturers. shenzhen h&m semiconductor co.,ltd . +0

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